Stretchable Organic Transistor Based Pressure Sensor Employing a Porous Elastomer Gate Dielectric

Compliant pressure sensors are a key technology for wearable electronics and haptic interfaces. Making transistors pressure-sensitive provides an opportunity to combine sensing matrix readout characteristics. However, there is typically trade-off in sensitivity, complexity of fabrication, mechanical resilience. To overcome these challenges, all solution-processed kirigami-inspired stretchable organic thin film transistor (OTFT) based sensor array introduced. The OTFTs integrate several novel processing design strategies that include electrohydrodynamic (EHD) jet-printed Ag nanowire (NW) electrodes partially embedded polyimide (PI) matrix. EHD printing fine pattern control the NW/PI composite improves stability. made sensitive by employing porous styrene-ethylene-butylene-styrene gate dielectric achieved using breath figure method. pore density can be controlled achieve tunable sensitivity. shown maintain performance under small bending radius (1 mm) sense applied from 0.75 25 kPa. Finally, cut introduced into substrate imparts stretchability while maintaining functionality. integration features methods this work enables mechanically resilient sensors.